Publications

2021

  • [DOI] C. Groppi, L. Mondonico, F. Maspero, C. Rinaldi, M. Asa, and R. Bertacco, “Effect of substrate preparation on the growth of lead-free piezoelectric (K0.5Na0.5)NbO3on Pt(111),” Journal of Applied Physics, vol. 129, iss. 19, 2021.
    [Bibtex]
    @article{Groppi2021,
    annote = {cited By 0},
    author = {Groppi, C and Mondonico, L and Maspero, F and Rinaldi, C and Asa, M and Bertacco, R},
    doi = {10.1063/5.0050038},
    journal = {Journal of Applied Physics},
    number = {19},
    title = {{Effect of substrate preparation on the growth of lead-free piezoelectric (K0.5Na0.5)NbO3on Pt(111)}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85106662033&doi=10.1063%2F5.0050038&partnerID=40&md5=3524c82a6e0588d59b900a8ca0afc824},
    volume = {129},
    year = {2021}
    }
  • [DOI] S. Varotto, L. Nessi, S. Cecchi, J. S{l}awińska, P. Noël, S. Petrò, F. Fagiani, A. Novati, M. Cantoni, D. Petti, E. Albisetti, M. Costa, R. Calarco, M. {Buongiorno Nardelli}, M. Bibes, S. Picozzi, J. Attané, L. Vila, R. Bertacco, and C. Rinaldi, “Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride,” Nature Electronics, vol. 4, p. 740–747, 2021.
    [Bibtex]
    @article{Varotto2021,
    abstract = {The development of spintronic devices has been limited by the poor compatibility between semiconductors and ferromagnetic sources of spin. The broken inversion symmetry of some semiconductors may allow for spin–charge interconversion, but its control by electric fields is volatile. This has led to interest in ferroelectric Rashba semiconductors, which combine semiconductivity, large spin–orbit coupling and non-volatility. Here we report room-temperature, non-volatile ferroelectric control of spin-to-charge conversion in epitaxial germanium telluride films. We show that ferroelectric switching by electrical gating is possible in germanium telluride, despite its high carrier density. We also show that spin-to-charge conversion has a similar magnitude to what is observed with platinum, but the charge current sign is controlled by the orientation of ferroelectric polarization. Comparison between theoretical and experimental data suggests that the inverse spin Hall effect plays a major role in switchable conversion.},
    author = {Varotto, Sara and Nessi, Luca and Cecchi, Stefano and S{\l}awi{\'{n}}ska, Jagoda and No{\"{e}}l, Paul and Petr{\`{o}}, Simone and Fagiani, Federico and Novati, Alessandro and Cantoni, Matteo and Petti, Daniela and Albisetti, Edoardo and Costa, Marcio and Calarco, Raffaella and {Buongiorno Nardelli}, Marco and Bibes, Manuel and Picozzi, Silvia and Attan{\'{e}}, Jean-Philippe and Vila, Laurent and Bertacco, Riccardo and Rinaldi, Christian},
    doi = {10.1038/s41928-021-00653-2},
    issn = {2520-1131},
    journal = {Nature Electronics},
    pages = {740--747},
    title = {{Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride}},
    url = {https://doi.org/10.1038/s41928-021-00653-2},
    volume = {4},
    year = {2021}
    }
  • [DOI] M. Hassan, S. Laureti, C. Rinaldi, F. Fagiani, S. Varotto, G. Barucca, N. Y. Schmidt, G. Varvaro, and M. Albrecht, “Perpendicularly magnetized Co/Pd-based magneto-resistive heterostructures on flexible substrates,” Nanoscale Advances, vol. 3, iss. 11, p. 3076–3084, 2021.
    [Bibtex]
    @article{Hassan20213076,
    annote = {cited By 0},
    author = {Hassan, M and Laureti, S and Rinaldi, C and Fagiani, F and Varotto, S and Barucca, G and Schmidt, N Y and Varvaro, G and Albrecht, M},
    doi = {10.1039/d1na00110h},
    journal = {Nanoscale Advances},
    number = {11},
    pages = {3076--3084},
    title = {{Perpendicularly magnetized Co/Pd-based magneto-resistive heterostructures on flexible substrates}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85107447476&doi=10.1039%2Fd1na00110h&partnerID=40&md5=a4ff93c4d09b5dc685a2ffe5fd9a2435},
    volume = {3},
    year = {2021}
    }
  • [DOI] P. Makushko, E. S. {Oliveros Mata}, G. S. {Cañón Bermúdez}, M. Hassan, S. Laureti, C. Rinaldi, F. Fagiani, G. Barucca, N. Schmidt, Y. Zabila, T. Kosub, R. Illing, O. Volkov, I. Vladymyrskyi, J. Fassbender, M. Albrecht, G. Varvaro, and D. Makarov, “Flexible Magnetoreceptor with Tunable Intrinsic Logic for On-Skin Touchless Human-Machine Interfaces,” Advanced Functional Materials, vol. 31, iss. 25, 2021.
    [Bibtex]
    @article{Makushko2021,
    annote = {cited By 3},
    author = {Makushko, P and {Oliveros Mata}, E S and {Ca{\~{n}}{\'{o}}n Berm{\'{u}}dez}, G S and Hassan, M and Laureti, S and Rinaldi, C and Fagiani, F and Barucca, G and Schmidt, N and Zabila, Y and Kosub, T and Illing, R and Volkov, O and Vladymyrskyi, I and Fassbender, J and Albrecht, M and Varvaro, G and Makarov, D},
    doi = {10.1002/adfm.202101089},
    journal = {Advanced Functional Materials},
    number = {25},
    title = {{Flexible Magnetoreceptor with Tunable Intrinsic Logic for On-Skin Touchless Human-Machine Interfaces}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85103153460&doi=10.1002%2Fadfm.202101089&partnerID=40&md5=992291509706ea720bed9bbb45ed1de8},
    volume = {31},
    year = {2021}
    }
  • [DOI] M. Asa, C. Rinaldi, L. Nessi, D. Chrastina, D. Petti, E. Albisetti, R. Bertacco, and M. Cantoni, “Epitaxy and controlled oxidation of chromium ultrathin films on ferroelectric BaTiO3 templates,” Journal of Crystal Growth, vol. 558, 2021.
    [Bibtex]
    @article{Asa2021,
    abstract = {Interfaces play a crucial role in the study of novel phenomena emerging at heterostructures comprising metals and functional oxides. In this work, we consider Cr/BaTiO3 heterostructures grown on Nb:SrTiO3 (0 0 1) substrates. Chromium thin films with 2 nm nominal thickness are deposited by molecular beam epitaxy on the BaTiO3 layer, and subsequently annealed in vacuum at temperatures ranging from 800 K to 970 K, and finally exposed to 10−7 torr of molecular oxygen for 300 s. Highly ordered films are obtained for each of this condition, ranging from metallic Cr to insulating Cr2O3 with tetragonal structure. Quite unexpectedly, an intermediate – fully ordered – case exists, with the co-presence of Cr and Cr2O3 compounds, each one with its proper crystal orientation. These results show the opportunity of controlling the metal/oxide state of crystalline Cr films grown onto the ferroelectric template BaTiO3/Nb:SrTiO3. {\textcopyright} 2020 Elsevier B.V.},
    address = {Dipartimento di Fisica, Politecnico di Milano, c/o Polifab, Via G. Colombo 81, Milano, 20133, Italy},
    annote = {Export Date: 15 February 2021
    CODEN: JCRGA
    Correspondence Address: Cantoni, M.; Dipartimento di Fisica, c/o Polifab, Via G. Colombo 81, Italy; email: matteo.cantoni@polimi.it},
    author = {Asa, M and Rinaldi, C and Nessi, L and Chrastina, D and Petti, D and Albisetti, E and Bertacco, R and Cantoni, M},
    doi = {10.1016/j.jcrysgro.2020.126012},
    issn = {00220248 (ISSN)},
    journal = {Journal of Crystal Growth},
    keywords = {A1. Crystal structure,A1. Low dimensional structures,A2. Single crystal growth,A3. Molecular beam epitaxy,B1. Metals,B1. Oxides,Barium titanate,Chromium compounds,Chromium thin films,Co-presence,Controlled oxidations,Crystal orientation,Exposed to,Ferroelectric films,Ferroelectricity,Functional oxides,In-vacuum,Molecular beam epitaxy,Molecular oxygen,Nominal thickness,Strontium titanates,Tetragonal structure,Ultrathin films},
    language = {English},
    publisher = {Elsevier B.V.},
    title = {{Epitaxy and controlled oxidation of chromium ultrathin films on ferroelectric BaTiO3 templates}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85100185019&doi=10.1016%2Fj.jcrysgro.2020.126012&partnerID=40&md5=a92da2b1a3f00f59e3d37e461f8b9d6f},
    volume = {558},
    year = {2021}
    }
  • [DOI] M. Giacometti, F. Milesi, P. L. Coppadoro, A. Rizzo, F. Fagiani, C. Rinaldi, M. Cantoni, D. Petti, E. Albisetti, M. Sampietro, M. Ciardo, G. Siciliano, P. Alano, B. Lemen, J. Bombe, M. T. {Nwaha Toukam}, P. F. Tina, M. R. Gismondo, M. Corbellino, R. Grande, G. B. Fiore, G. Ferrari, S. Antinori, and R. Bertacco, “A Lab-On-chip Tool for Rapid, Quantitative, and Stage-selective Diagnosis of Malaria,” Advanced Science, vol. 8, iss. 14, 2021.
    [Bibtex]
    @article{Giacometti2021,
    annote = {cited By 0},
    author = {Giacometti, M and Milesi, F and Coppadoro, P L and Rizzo, A and Fagiani, F and Rinaldi, C and Cantoni, M and Petti, D and Albisetti, E and Sampietro, M and Ciardo, M and Siciliano, G and Alano, P and Lemen, B and Bombe, J and {Nwaha Toukam}, M T and Tina, P F and Gismondo, M R and Corbellino, M and Grande, R and Fiore, G B and Ferrari, G and Antinori, S and Bertacco, R},
    doi = {10.1002/advs.202004101},
    journal = {Advanced Science},
    number = {14},
    title = {{A Lab-On-chip Tool for Rapid, Quantitative, and Stage-selective Diagnosis of Malaria}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85105873696&doi=10.1002%2Fadvs.202004101&partnerID=40&md5=93030bb16052fc7078f9c11adfb761d7},
    volume = {8},
    year = {2021}
    }

2020

  • [DOI] E. Albisetti, G. Scaramuzzi, C. Rinaldi, M. Cantoni, R. Bertacco, and D. Petti, “Temperature dependence of the magnetic properties of IrMn/CoFeB/Ru/CoFeB exchange biased synthetic antiferromagnets,” Materials, vol. 13, iss. 2, 2020.
    [Bibtex]
    @article{Albisetti2020,
    annote = {Cited By :1
    Export Date: 17 January 2021},
    author = {Albisetti, E and Scaramuzzi, G and Rinaldi, C and Cantoni, M and Bertacco, R and Petti, D},
    doi = {10.3390/ma13020387},
    journal = {Materials},
    number = {2},
    title = {{Temperature dependence of the magnetic properties of IrMn/CoFeB/Ru/CoFeB exchange biased synthetic antiferromagnets}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85081078338&doi=10.3390%2Fma13020387&partnerID=40&md5=75af28a14fe6cb1f29f3bab21bbcbcfa},
    volume = {13},
    year = {2020}
    }
  • [DOI] E. Longo, C. Wiemer, M. Belli, R. Cecchini, M. Longo, M. Cantoni, C. Rinaldi, M. D. Overbeek, C. H. Winter, G. Gubbiotti, G. Tallarida, M. Fanciulli, and R. Mantovan, “Ferromagnetic resonance of Co thin films grown by atomic layer deposition on the Sb2Te3 topological insulator,” Journal of Magnetism and Magnetic Materials, vol. 509, 2020.
    [Bibtex]
    @article{Longo2020,
    abstract = {Interfacing ferromagnetic materials with topological insulators is an intriguing strategy in order to enhance spin-to-charge conversion mechanisms, paving the way toward highly efficient spin-based electronic devices. In particular, the use of large-scale deposition techniques is demanding for a sustainable and cost-effective industrial technology transfer. In this work, we study the magnetic properties of the Co/Sb2Te3 heterostructure, where the ferromagnetic Co layer is deposited by atomic layer deposition on top of the Sb2Te3 topological insulator, which is grown by metal organic chemical vapor deposition. In particular, broadband ferromagnetic resonance is employed to characterize the Co/Sb2Te3 system and the reference Co/Pt heterostructure. For Co/Sb2Te3, we extract an effective magnetic anisotropy constant [Formula presented], which is an order of magnitude higher than in Co/Pt [Formula presented]. The large difference in the Keff values observed in Co/Sb2Te3 and Co/Pt is explained in terms of the different Co crystalline structures achieved on top of Sb2Te3 and Pt, respectively. Interestingly, the Co/Sb2Te3 system displays a relatively large Gilbert damping constant ($\alpha$ = 0.095), which we suggest as possibly due to spin pumping from the Co layer into the Sb2Te3 topological insulator. {\textcopyright} 2020 Elsevier B.V.},
    address = {CNR-IMM, Unit of Agrate Brianza (MB), Via C. Olivetti 2, Agrate Brianza, MB 20864, Italy},
    annote = {Export Date: 15 February 2021
    CODEN: JMMMD
    Correspondence Address: Longo, E.; CNR-IMM, Via C. Olivetti 2, Italy; email: Emanuele.Longo@mdm.imm.cnr.it},
    author = {Longo, E and Wiemer, C and Belli, M and Cecchini, R and Longo, M and Cantoni, M and Rinaldi, C and Overbeek, M D and Winter, C H and Gubbiotti, G and Tallarida, G and Fanciulli, M and Mantovan, R},
    doi = {10.1016/j.jmmm.2020.166885},
    issn = {03048853 (ISSN)},
    journal = {Journal of Magnetism and Magnetic Materials},
    keywords = {Antimony compounds,Atomic layer deposition,Broadband ferromagnetic resonance,Cobalt,Conversion mechanism,Cost effectiveness,Crystalline structure,Effective magnetic anisotropy constant,Electric insulators,Ferromagnetic materials,Ferromagnetic resonance,Ferromagnetism,Gilbert damping constant,Industrial technology,Magnetic anisotropy,Metallorganic chemical vapor deposition,Nanocrystalline materials,Organic chemicals,Organometallics,Platinum compounds,Scale deposition,System displays,Technology transfer,Tellurium compounds,Topological insulators},
    language = {English},
    publisher = {Elsevier B.V.},
    title = {{Ferromagnetic resonance of Co thin films grown by atomic layer deposition on the Sb2Te3 topological insulator}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85083373842&doi=10.1016%2Fj.jmmm.2020.166885&partnerID=40&md5=bad9ab0f2bc2be1fe83f5d2a1f5e1d23},
    volume = {509},
    year = {2020}
    }
  • [DOI] E. Albisetti, S. Tacchi, R. Silvani, G. Scaramuzzi, S. Finizio, S. Wintz, C. Rinaldi, M. Cantoni, J. Raabe, G. Carlotti, R. Bertacco, E. Riedo, and D. Petti, “Optically Inspired Nanomagnonics with Nonreciprocal Spin Waves in Synthetic Antiferromagnets,” Advanced Materials, vol. 32, iss. 9, 2020.
    [Bibtex]
    @article{Albisetti2020a,
    annote = {Cited By :9
    Export Date: 17 January 2021},
    author = {Albisetti, E and Tacchi, S and Silvani, R and Scaramuzzi, G and Finizio, S and Wintz, S and Rinaldi, C and Cantoni, M and Raabe, J and Carlotti, G and Bertacco, R and Riedo, E and Petti, D},
    doi = {10.1002/adma.201906439},
    journal = {Advanced Materials},
    number = {9},
    title = {{Optically Inspired Nanomagnonics with Nonreciprocal Spin Waves in Synthetic Antiferromagnets}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078060319&doi=10.1002%2Fadma.201906439&partnerID=40&md5=0dfabe6a27eb0f20d8e2caf995ad9ab4},
    volume = {32},
    year = {2020}
    }
  • [DOI] M. Asa, C. Rinaldi, R. Pazzocco, D. Petti, E. Albisetti, R. Bertacco, and M. Cantoni, “Electrical readout of the antiferromagnetic state of IrMn through anomalous Hall effect,” Journal of Applied Physics, vol. 128, iss. 5, 2020.
    [Bibtex]
    @article{Asa2020a,
    annote = {Cited By :2
    Export Date: 17 January 2021},
    author = {Asa, M and Rinaldi, C and Pazzocco, R and Petti, D and Albisetti, E and Bertacco, R and Cantoni, M},
    doi = {10.1063/5.0009553},
    journal = {Journal of Applied Physics},
    number = {5},
    title = {{Electrical readout of the antiferromagnetic state of IrMn through anomalous Hall effect}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85089309860&doi=10.1063%2F5.0009553&partnerID=40&md5=b77f86203de0dde0467e64bf0c8e1463},
    volume = {128},
    year = {2020}
    }
  • [DOI] M. Asa, C. Autieri, R. Pazzocco, C. Rinaldi, W. Brzezicki, A. Stroppa, M. Cuoco, G. Varvaro, S. Picozzi, and M. Cantoni, “Anomalous Hall effect in antiferromagnetic/nonmagnetic interfaces,” Physical Review Research, vol. 2, iss. 4, 2020.
    [Bibtex]
    @article{Asa2020,
    abstract = {We report a combined theoretical and experimental investigation of magnetic proximity and Hall transport in Pt/Cr bilayers. Density-functional theory indicates that interfacial magnetic moments can be induced in the Pt layer and a strong magnetocrystalline anisotropy with an out-of-plane easy axis arises in the antiferromagnet. A signal ascribed to the anomalous Hall effect is detected and associated to the interface between Pt and Cr layers. We discuss how this effect originates from the Berry curvature of the electronic structure at the interface and the correlation with the character of the proximity-induced magnetic moments. {\textcopyright} 2020 authors. Published by the American Physical Society.},
    annote = {cited By 2},
    author = {Asa, M and Autieri, C and Pazzocco, R and Rinaldi, C and Brzezicki, W and Stroppa, A and Cuoco, M and Varvaro, G and Picozzi, S and Cantoni, M},
    doi = {10.1103/PhysRevResearch.2.043394},
    journal = {Physical Review Research},
    number = {4},
    title = {{Anomalous Hall effect in antiferromagnetic/nonmagnetic interfaces}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85106988225&doi=10.1103%2FPhysRevResearch.2.043394&partnerID=40&md5=6be51e4442f72c91b3019678f8f4f64a},
    volume = {2},
    year = {2020}
    }
  • [DOI] C. Rinaldi, M. Asa, D. Chrastina, J. L. Hart, M. L. Taheri, I. Pallecchi, D. Marré, and M. Cantoni, “Study and optimization of epitaxial films of Cr and Pt/Cr bilayers on MgO,” Journal of Physics D: Applied Physics, vol. 53, iss. 10, 2020.
    [Bibtex]
    @article{Rinaldi2020,
    annote = {Export Date: 17 January 2021},
    author = {Rinaldi, C and Asa, M and Chrastina, D and Hart, J L and Taheri, M L and Pallecchi, I and Marr{\'{e}}, D and Cantoni, M},
    doi = {10.1088/1361-6463/ab6148},
    journal = {Journal of Physics D: Applied Physics},
    number = {10},
    title = {{Study and optimization of epitaxial films of Cr and Pt/Cr bilayers on MgO}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85079543562&doi=10.1088%2F1361-6463%2Fab6148&partnerID=40&md5=9f77a14e19ccb31c81c186d7c904a996},
    volume = {53},
    year = {2020}
    }
  • [DOI] S. Varotto, M. Cosset-Cheneau, C. Grezes, Y. Fu, P. Warin, A. Brenac, J. -F. Jacquot, S. Gambarelli, C. Rinaldi, V. Baltz, J. -P. Attane, L. Vila, and P. Noel, “Independence of the Inverse Spin Hall Effect with the Magnetic Phase in Thin NiCu Films,” Physical Review Letters, vol. 125, iss. 26, 2020.
    [Bibtex]
    @article{Varotto2020,
    annote = {Export Date: 17 January 2021},
    author = {Varotto, S and Cosset-Cheneau, M and Grezes, C and Fu, Y and Warin, P and Brenac, A and Jacquot, J.-F. and Gambarelli, S and Rinaldi, C and Baltz, V and Attane, J.-P. and Vila, L and Noel, P},
    doi = {10.1103/PhysRevLett.125.267204},
    journal = {Physical Review Letters},
    number = {26},
    title = {{Independence of the Inverse Spin Hall Effect with the Magnetic Phase in Thin NiCu Films}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85099157680&doi=10.1103%2FPhysRevLett.125.267204&partnerID=40&md5=06bbb8757a0813e6a2bf6e86ec7c9175},
    volume = {125},
    year = {2020}
    }
  • [DOI] F. Motti, G. Vinai, V. Bonanni, V. Polewczyk, P. Mantegazza, T. Forrest, F. MacCherozzi, S. Benedetti, C. Rinaldi, M. Cantoni, D. Cassese, S. Prato, S. S. Dhesi, G. Rossi, G. Panaccione, and P. Torelli, “Interplay between morphology and magnetoelectric coupling in Fe/PMN-PT multiferroic heterostructures studied by microscopy techniques,” Physical Review Materials, vol. 4, iss. 11, 2020.
    [Bibtex]
    @article{Motti2020,
    annote = {Export Date: 17 January 2021},
    author = {Motti, F and Vinai, G and Bonanni, V and Polewczyk, V and Mantegazza, P and Forrest, T and MacCherozzi, F and Benedetti, S and Rinaldi, C and Cantoni, M and Cassese, D and Prato, S and Dhesi, S S and Rossi, G and Panaccione, G and Torelli, P},
    doi = {10.1103/PhysRevMaterials.4.114418},
    journal = {Physical Review Materials},
    number = {11},
    title = {{Interplay between morphology and magnetoelectric coupling in Fe/PMN-PT multiferroic heterostructures studied by microscopy techniques}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85097141886&doi=10.1103%2FPhysRevMaterials.4.114418&partnerID=40&md5=08b702b100e2febfe0d9938c870e1df0},
    volume = {4},
    year = {2020}
    }
  • [DOI] G. Franchini, A. S. Spinelli, G. Nicosia, I. Fumagalli, M. Asa, C. Groppi, C. Rinaldi, A. L. Lacaita, R. Bertacco, and C. {Monzio Compagnoni}, “Characterization and Modeling of Current Transport in Metal/Ferroelectric/Semiconductor Tunnel Junctions,” IEEE Transactions on Electron Devices, vol. 67, iss. 9, p. 3729–3735, 2020.
    [Bibtex]
    @article{Franchini2020,
    annote = {Cited By :1
    Export Date: 17 January 2021},
    author = {Franchini, G and Spinelli, A S and Nicosia, G and Fumagalli, I and Asa, M and Groppi, C and Rinaldi, C and Lacaita, A L and Bertacco, R and {Monzio Compagnoni}, C},
    doi = {10.1109/TED.2020.3011398},
    journal = {IEEE Transactions on Electron Devices},
    number = {9},
    pages = {3729--3735},
    title = {{Characterization and Modeling of Current Transport in Metal/Ferroelectric/Semiconductor Tunnel Junctions}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85090755513&doi=10.1109%2FTED.2020.3011398&partnerID=40&md5=2189a0dfc92f8cb5a08c7fae7757be32},
    volume = {67},
    year = {2020}
    }
  • [DOI] E. Longo, C. Wiemer, R. Cecchini, M. Longo, A. Lamperti, A. Khanas, A. Zenkevich, M. Cantoni, C. Rinaldi, M. Fanciulli, and R. Mantovan, “Fe/Sb2Te3 Interface Reconstruction through Mild Thermal Annealing,” Advanced Materials Interfaces, vol. 7, iss. 19, 2020.
    [Bibtex]
    @article{Longo2020a,
    abstract = {When coupled with ferromagnetic layers (FM), topological insulators (TI) are expected to boost the charge-to-spin conversion efficiency across the FM/TI interface. In this context, a thorough control and optimization of the FM/TI interface quality are requested. Here, the evolution of the chemical, structural, and magnetic properties of the Fe/Sb2Te3 heterostructure is presented as a function of a rapid mild thermal annealing conducted on the Sb2Te3-TI (up to 200 °C). While the bilayer is not subjected to any thermal treatment upon Fe deposition, the annealing of Sb2Te3 markedly improves its crystalline quality, leading to an increase in the fraction of ferromagnetic Fe atoms at the buried Fe/Sb2Te3 interface and a slight lowering of the magnetic coercivity of the Fe layer. The method is an efficient tool to clean up the Fe/Sb2Te3 interface, which may be extended to different FM/TI heterostructures. Simultaneously to the interface reconstruction, a constant ≈20% fraction of FeTe develops at the interface. Since FeTe can display superconductivity, the Fe/Sb2Te3 system could have potentialities for exploiting phenomena at the edge of magnetism, superconductivity and topology. {\textcopyright} 2020 Wiley-VCH GmbH},
    address = {CNR-IMM, Unit of Agrate Brianza, Via C. Olivetti 2, Agrate Brianza, 20864, Italy},
    annote = {Export Date: 15 February 2021
    Correspondence Address: Longo, E.; CNR-IMM, Via C. Olivetti 2, Italy; email: emanuele.longo@mdm.imm.cnr.it
    Correspondence Address: Mantovan, R.; CNR-IMM, Via C. Olivetti 2, Italy; email: roberto.mantovan@mdm.imm.cnr.it
    Correspondence Address: Longo, E.; Dipartimento di Scienze dei Materiali, Via R. Cozzi 55, Italy; email: emanuele.longo@mdm.imm.cnr.it},
    author = {Longo, E and Wiemer, C and Cecchini, R and Longo, M and Lamperti, A and Khanas, A and Zenkevich, A and Cantoni, M and Rinaldi, C and Fanciulli, M and Mantovan, R},
    doi = {10.1002/admi.202000905},
    issn = {21967350 (ISSN)},
    journal = {Advanced Materials Interfaces},
    keywords = {Annealing,Antimony compounds,Control and optimization,Crystalline quality,Fe layer,Ferromagnetic layers,Ferromagnetic materials,Ferromagnetism,Frequency modulation,Interface quality,Interface reconstruction,Iron,Iron-based Superconductors,Magnetic coercivities,Thermal-annealing,ferromagnetism,spintronics,topological insulators},
    language = {English},
    number = {19},
    publisher = {Wiley-VCH Verlag},
    title = {{Fe/Sb2Te3 Interface Reconstruction through Mild Thermal Annealing}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85089688168&doi=10.1002%2Fadmi.202000905&partnerID=40&md5=336a064ddc44c8377bff3dc1134252ae},
    volume = {7},
    year = {2020}
    }

2019

  • [DOI] G. Panzeri, A. Accogli, E. Gibertini, S. Varotto, C. Rinaldi, L. Nobili, and L. Magagnin, “Electrodeposition of cobalt thin films and nanowires from ethylene glycol-based solution,” Electrochemistry Communications, vol. 103, p. 31–36, 2019.
    [Bibtex]
    @article{Panzeri2019,
    annote = {Export Date: 28 August 2019},
    author = {Panzeri, G and Accogli, A and Gibertini, E and Varotto, S and Rinaldi, C and Nobili, L and Magagnin, L},
    doi = {10.1016/j.elecom.2019.04.012},
    journal = {Electrochemistry Communications},
    pages = {31--36},
    title = {{Electrodeposition of cobalt thin films and nanowires from ethylene glycol-based solution}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85065123475&doi=10.1016%2Fj.elecom.2019.04.012&partnerID=40&md5=ece70924accf66907322a4cc4ab25d3e},
    volume = {103},
    year = {2019}
    }
  • [DOI] G. Vinai, F. Motti, V. Bonanni, A. Y. Petrov, S. Benedetti, C. Rinaldi, M. Stella, D. Cassese, S. Prato, M. Cantoni, G. Rossi, G. Panaccione, and P. Torelli, “Reversible Modification of Ferromagnetism through Electrically Controlled Morphology,” Advanced Electronic Materials, vol. 5, iss. 7, 2019.
    [Bibtex]
    @article{Vinai2019,
    annote = {Export Date: 28 August 2019},
    author = {Vinai, G and Motti, F and Bonanni, V and Petrov, A Y and Benedetti, S and Rinaldi, C and Stella, M and Cassese, D and Prato, S and Cantoni, M and Rossi, G and Panaccione, G and Torelli, P},
    doi = {10.1002/aelm.201900150},
    journal = {Advanced Electronic Materials},
    number = {7},
    title = {{Reversible Modification of Ferromagnetism through Electrically Controlled Morphology}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85063984346&doi=10.1002%2Faelm.201900150&partnerID=40&md5=a7dbee8548d6bead6a2a2122e45ce26d},
    volume = {5},
    year = {2019}
    }
  • [DOI] J. S{l}awińska, D. {Di Sante}, S. Varotto, C. Rinaldi, R. Bertacco, and S. Picozzi, “Fe/GeTe(111) heterostructures as an avenue towards spintronics based on ferroelectric Rashba semiconductors,” Phys. Rev. B, vol. 99, iss. 7, p. 75306, 2019.
    [Bibtex]
    @article{Sawinska2019,
    author = {S{\l}awi{\'{n}}ska, Jagoda and {Di Sante}, Domenico and Varotto, Sara and Rinaldi, Christian and Bertacco, Riccardo and Picozzi, Silvia},
    doi = {10.1103/PhysRevB.99.075306},
    journal = {Phys. Rev. B},
    month = {feb},
    number = {7},
    pages = {75306},
    publisher = {American Physical Society},
    title = {{Fe/GeTe(111) heterostructures as an avenue towards spintronics based on ferroelectric Rashba semiconductors}},
    volume = {99},
    year = {2019}
    }

2018

  • [DOI] G. Panzeri, A. Accogli, E. Gibertini, C. Rinaldi, L. Nobili, and L. Magagnin, “Electrodeposition of high-purity nanostructured iron films from Fe(II) and Fe(III) non-aqueous solutions based on ethylene glycol,” Electrochimica Acta, vol. 271, p. 576–581, 2018.
    [Bibtex]
    @article{Panzeri2018a,
    abstract = {Ethylene glycol was studied as solvent for the electrodeposition of iron from both bivalent and trivalent iron chloride solutions. Using cyclic voltammetry (CV) on Pt electrodes, the impossibility to directly reduce Fe(III) ions to metallic state Fe(0) was evidenced with the formation of Fe(II) species as intermediate step for iron plating. Linear sweep voltammetries (LSVs) were carried out on copper substrate confirming the results previously obtained on platinum. Potentiostatic depositions were performed from both Fe(II) and Fe(III) solutions in a broad potential interval (from −1.5 to −2.3 V vs Pt) to define the threshold value for iron reduction and film formation: the best results were obtained at −1.7 V vs Pt for Fe(II) solution and at −2.3 V vs Pt for Fe(III) one. Deposits were characterized with field emission scanning electron microscope (FE-SEM) showing a nanostructured morphology with no traces of oxygen in the deposits, resulting in a pure metallic plated iron: films showed a corrosion potential (Ecorr = −0.54 V vs Ag/AgCl) in 3.5 wt% NaCl aqueous solution similar to high purity metallurgical iron sheet (Ecorr = −0.4 V vs Ag/AgCl). X-Ray diffraction patterns showed a preferential orientation of the nanocrystalline deposit along the BCC [110] direction. Vibrating sample magnetometer (VSM) analysis showed a good saturation magnetization (1500 ± 100 kA/m) and low coercivity (∼20 Oe) indicative of a high purity iron film. {\textcopyright} 2018 Elsevier Ltd},
    address = {Dipartimento di Chimica, Materiali e Ingegneria Chimica Giulio Natta, Politecnico di Milano, Milano, 20131, Italy},
    annote = {Cited By :1
    Export Date: 14 September 2018},
    author = {Panzeri, G and Accogli, A and Gibertini, E and Rinaldi, C and Nobili, L and Magagnin, L},
    doi = {10.1016/j.electacta.2018.03.174},
    journal = {Electrochimica Acta},
    keywords = {Coercivity,Corrosion,Iron,Nanocrystalline,Thin films,VSM},
    pages = {576--581},
    title = {{Electrodeposition of high-purity nanostructured iron films from Fe(II) and Fe(III) non-aqueous solutions based on ethylene glycol}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85044970586&doi=10.1016%2Fj.electacta.2018.03.174&partnerID=40&md5=b9ef7c9c96e40c0034146a5955abddd1},
    volume = {271},
    year = {2018}
    }
  • [DOI] I. M. Albo, S. Varotto, M. Asa, C. Rinaldi, M. Cantoni, R. Bertacco, and F. Morichetti, “Non-volatile switching of polycrystalline barium titanate films integrated in silicon photonic waveguides,” in Optics InfoBase Conference Papers, Dipartimento di Elettronica, Informazione e Bioingegneria Politecnico di Milano, Milano, 20133, Italy, 2018.
    [Bibtex]
    @inproceedings{Albo2018,
    abstract = {Domain switching in polycrystalline BaTiO<inf>3</inf> is exploited to realize self-holding phase actuators in Si-photonics. A non-volatile change of the BaTiO<inf>3</inf> refractive-index is achieved and poly-BaTiO<inf>3</inf>-coated silicon photonic circuits are demonstrated. {\textcopyright} 2018 The Author(s).},
    address = {Dipartimento di Elettronica, Informazione e Bioingegneria Politecnico di Milano, Milano, 20133, Italy},
    annote = {Export Date: 14 September 2018},
    author = {Albo, I M and Varotto, S and Asa, M and Rinaldi, C and Cantoni, M and Bertacco, R and Morichetti, F},
    booktitle = {Optics InfoBase Conference Papers},
    doi = {10.1364/IPRSN.2018.ITu4I.2},
    title = {{Non-volatile switching of polycrystalline barium titanate films integrated in silicon photonic waveguides}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85051278597&doi=10.1364%2FIPRSN.2018.ITu4I.2&partnerID=40&md5=68f78bd42e6a376d07bd240f3c5d97d7},
    volume = {Part F101-},
    year = {2018}
    }
  • [DOI] M. Veis, J. Minár, G. Steciuk, L. Palatinus, C. Rinaldi, M. Cantoni, D. Kriegner, K. K. Tikuišis, J. Hamrle, M. Zahradník, R. Antoš, J. Železný, L. Šmejkal, X. Marti, P. Wadley, R. P. Campion, C. Frontera, K. Uhlířová, T. Duchoň, P. KuŽel, V. Novák, T. Jungwirth, and K. Výborný, “Band structure of CuMnAs probed by optical and photoemission spectroscopy,” Physical Review B, vol. 97, iss. 12, 2018.
    [Bibtex]
    @article{Veis2018,
    abstract = {The tetragonal phase of CuMnAs progressively appears as one of the key materials for antiferromagnetic spintronics due to efficient current-induced spin-torques whose existence can be directly inferred from crystal symmetry. Theoretical understanding of spintronic phenomena in this material, however, relies on the detailed knowledge of electronic structure (band structure and corresponding wave functions) which has so far been tested only to a limited extent. We show that AC permittivity (obtained from ellipsometry) and UV photoelectron spectra agree with density functional calculations. Together with the x-ray diffraction and precession electron diffraction tomography, our analysis confirms recent theoretical claim [Phys. Rev. B 96, 094406 (2017)2469-995010.1103/PhysRevB.96.094406] that copper atoms occupy lattice positions in the basal plane of the tetragonal unit cell. {\textcopyright} 2018 American Physical Society.},
    address = {Charles University, Faculty of Mathematics and Physics, Ke Karlovu 5, Praha 2, Czech Republic},
    annote = {Export Date: 14 September 2018},
    author = {Veis, M and Min{\'{a}}r, J and Steciuk, G and Palatinus, L and Rinaldi, C and Cantoni, M and Kriegner, D and Tikui{\v{s}}is, K K and Hamrle, J and Zahradn{\'{i}}k, M and Anto{\v{s}}, R and {\v{Z}}elezn{\'{y}}, J and {\v{S}}mejkal, L and Marti, X and Wadley, P and Campion, R P and Frontera, C and Uhl{\'{i}}řov{\'{a}}, K and Duchoň, T and Ku{\v{Z}}el, P and Nov{\'{a}}k, V and Jungwirth, T and V{\'{y}}born{\'{y}}, K},
    doi = {10.1103/PhysRevB.97.125109},
    journal = {Physical Review B},
    number = {12},
    title = {{Band structure of CuMnAs probed by optical and photoemission spectroscopy}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85043986617&doi=10.1103%2FPhysRevB.97.125109&partnerID=40&md5=d362b8f51524c905c49cabb1a1422fc5},
    volume = {97},
    year = {2018}
    }
  • [DOI] M. Giacometti, C. Rinaldi, M. Monticelli, L. Callegari, A. Collovini, D. Petti, G. Ferrari, and R. Bertacco, “Electrical and magnetic properties of hemozoin nanocrystals,” Applied Physics Letters, vol. 113, iss. 20, p. 203703, 2018.
    [Bibtex]
    @article{Giacometti2018,
    annote = {doi: 10.1063/1.5050062},
    author = {Giacometti, M and Rinaldi, C and Monticelli, M and Callegari, L and Collovini, A and Petti, D and Ferrari, G and Bertacco, R},
    doi = {10.1063/1.5050062},
    issn = {0003-6951},
    journal = {Applied Physics Letters},
    month = {nov},
    number = {20},
    pages = {203703},
    publisher = {American Institute of Physics},
    title = {{Electrical and magnetic properties of hemozoin nanocrystals}},
    url = {https://doi.org/10.1063/1.5050062},
    volume = {113},
    year = {2018}
    }
  • [DOI] C. Rinaldi, L. Baldrati, M. {Di Loreto}, M. Asa, R. Bertacco, and M. Cantoni, “Blocking Temperature Engineering in Exchange-Biased CoFeB/IrMn Bilayer,” IEEE Transactions on Magnetics, vol. 54, iss. 4, p. 1–7, 2018.
    [Bibtex]
    @article{Rinaldi2018a,
    abstract = {In this paper, we report on the magnetic and chemical characterization of the exchange-biased CoFeB/IrMn bilayers, grown by magnetron sputtering on a Si-based platform and capped by either a Ru or MgO/Ru overlayer. For Ru capping, the blocking temperature monotonously increases with the IrMn thickness within the investigated range (3.5-8 nm). On the contrary, for MgO/Ru capping, the exchange bias is inhibited below 6 nm, whereas above 6 nm, the magnetic behavior is the same of Ru-capped films. The chemical analysis reveals a significant dependence of the Mn content from the capping layer for thin IrMn films (2.5 nm), whereas the difference disappears when IrMn becomes thick (7 nm). Our work suggests that a non-uniform composition of the IrMn films directly affects the exchange coupling at the IrMn/CoFeB interface.},
    author = {Rinaldi, Christian and Baldrati, Lorenzo and {Di Loreto}, Matteo and Asa, Marco and Bertacco, Riccardo and Cantoni, Matteo},
    doi = {10.1109/TMAG.2017.2787623},
    issn = {00189464},
    journal = {IEEE Transactions on Magnetics},
    keywords = {Antiferromagnetic (AFM) layer,exchange coupling,magnetic and spintronic materials,magnetic multilayers},
    month = {apr},
    number = {4},
    pages = {1--7},
    title = {{Blocking Temperature Engineering in Exchange-Biased CoFeB/IrMn Bilayer}},
    volume = {54},
    year = {2018}
    }
  • [DOI] M. Asa, G. Vinai, J. L. Hart, C. Autieri, C. Rinaldi, P. Torelli, G. Panaccione, M. L. Taheri, S. Picozzi, and M. Cantoni, “Interdiffusion-driven synthesis of tetragonal chromium (III) oxide on BaTi O3,” Physical Review Materials, vol. 2, iss. 3, 2018.
    [Bibtex]
    @article{Asa2018,
    annote = {Cited By :2
    Export Date: 28 August 2019},
    author = {Asa, M and Vinai, G and Hart, J L and Autieri, C and Rinaldi, C and Torelli, P and Panaccione, G and Taheri, M L and Picozzi, S and Cantoni, M},
    doi = {10.1103/PhysRevMaterials.2.033401},
    journal = {Physical Review Materials},
    number = {3},
    title = {{Interdiffusion-driven synthesis of tetragonal chromium (III) oxide on BaTi O3}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85051301744&doi=10.1103%2FPhysRevMaterials.2.033401&partnerID=40&md5=b0dc35aa9793b2a7fea52d949fb93746},
    volume = {2},
    year = {2018}
    }
  • [DOI] S. Varotto, L. Nessi, S. Cecchi, R. Calarco, R. Bertacco, and C. Rinaldi, “Investigation of charge-to-spin conversion in GeTe,” in Proceedings of SPIE – The International Society for Optical Engineering, 2018.
    [Bibtex]
    @inproceedings{Varotto2018,
    annote = {cited By 0},
    author = {Varotto, S and Nessi, L and Cecchi, S and Calarco, R and Bertacco, R and Rinaldi, C},
    booktitle = {Proceedings of SPIE - The International Society for Optical Engineering},
    doi = {10.1117/12.2320502},
    title = {{Investigation of charge-to-spin conversion in GeTe}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85055513511&doi=10.1117%2F12.2320502&partnerID=40&md5=e04de0d4b3d4484269c7efeb8c7df64b},
    volume = {10732},
    year = {2018}
    }
  • [DOI] I. Maqueira-Albo, S. Varotto, M. Asa, C. Rinaldi, M. Cantoni, R. Bertacco, and F. Morichetti, “Integration of Non-Volatile Ferroelectric Actuators in Silicon Photonics Circuits,” in International Conference on Transparent Optical Networks, 2018.
    [Bibtex]
    @inproceedings{Maqueira-Albo2018,
    annote = {cited By 0},
    author = {Maqueira-Albo, I and Varotto, S and Asa, M and Rinaldi, C and Cantoni, M and Bertacco, R and Morichetti, F},
    booktitle = {International Conference on Transparent Optical Networks},
    doi = {10.1109/ICTON.2018.8473993},
    title = {{Integration of Non-Volatile Ferroelectric Actuators in Silicon Photonics Circuits}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85055482615&doi=10.1109%2FICTON.2018.8473993&partnerID=40&md5=18ee7943cdde302c47880995e09425bc},
    volume = {2018-July},
    year = {2018}
    }
  • [DOI] C. Rinaldi, S. Varotto, M. Asa, J. S{l}awińska, J. Fujii, G. Vinai, S. Cecchi, D. {Di Sante}, R. Calarco, I. Vobornik, G. Panaccione, S. Picozzi, and R. Bertacco, “Ferroelectric control of the spin texture in GeTe,” Nano Letters, vol. 18, iss. 5, p. 2751–2758, 2018.
    [Bibtex]
    @article{Rinaldi2018,
    abstract = {The electric and nonvolatile control of the spin texture in semiconductors would represent a fundamental step toward novel electronic devices combining memory and computing functionalities. Recently, GeTe has been theoretically proposed as the father compound of a new class of materials, namely ferroelectric Rashba semiconductors. They display bulk bands with giant Rashba-like splitting due to the inversion symmetry breaking arising from the ferroelectric polarization, thus allowing for the ferroelectric control of the spin. Here, we provide the experimental demonstration of the correlation between ferroelectricity and spin texture. A surface-engineering strategy is used to set two opposite predefined uniform ferroelectric polarizations, inward and outward, as monitored by piezoresponse force microscopy. Spin and angular resolved photoemission experiments show that these GeTe(111) surfaces display opposite sense of circulation of spin in bulk Rashba bands. Furthermore, we demonstrate the crafting of nonvolatile ferroelectric patterns in GeTe films at the nanoscale by using the conductive tip of an atomic force microscope. Based on the intimate link between ferroelectric polarization and spin in GeTe, ferroelectric patterning paves the way to the investigation of devices with engineered spin configurations.},
    author = {Rinaldi, Christian and Varotto, Sara and Asa, Marco and S{\l}awi{\'{n}}ska, Jagoda and Fujii, Jun and Vinai, Giovanni and Cecchi, Stefano and {Di Sante}, Domenico and Calarco, Raffaella and Vobornik, Ivana and Panaccione, Giancarlo and Picozzi, Silvia and Bertacco, Riccardo},
    doi = {10.1021/acs.nanolett.7b04829},
    issn = {15306992},
    journal = {Nano Letters},
    keywords = {Germanium telluride,Rashba effect,ferroelectricity,spin-orbitronics},
    number = {5},
    pages = {2751--2758},
    title = {{Ferroelectric control of the spin texture in GeTe}},
    volume = {18},
    year = {2018}
    }
  • [DOI] G. Panzeri, L. Pedrazzetti, C. Rinaldi, L. Nobili, and L. Magagnin, “Electrodeposition of nanostructured cobalt films from choline chloride-ethylene glycol Deep Eutectic Solvent,” Journal of the Electrochemical Society, vol. 165, iss. 11, p. D580–D583, 2018.
    [Bibtex]
    @article{Panzeri2018,
    annote = {Cited By :2
    Export Date: 28 August 2019},
    author = {Panzeri, G and Pedrazzetti, L and Rinaldi, C and Nobili, L and Magagnin, L},
    doi = {10.1149/2.0031813jes},
    journal = {Journal of the Electrochemical Society},
    number = {11},
    pages = {D580--D583},
    title = {{Electrodeposition of nanostructured cobalt films from choline chloride-ethylene glycol Deep Eutectic Solvent}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85059021688&doi=10.1149%2F2.0031813jes&partnerID=40&md5=28586383ff8d2da212606703e2e0490d},
    volume = {165},
    year = {2018}
    }

2017

  • [DOI] G. Panzeri, M. Tresoldi, C. Rinaldi, and L. Magagnin, “Electrodeposition of magnetic SmCo films from deep eutectic solvents and choline chloride-ethylene glycol mixtures,” Journal of the Electrochemical Society, vol. 164, iss. 13, p. D930–D933, 2017.
    [Bibtex]
    @article{Panzeri2017,
    abstract = {Suitability of mixtures based on ethylene glycol and choline chloride is evaluated for the electrodeposition of magnetic SmCo alloys. Deep eutectic solvents (DES) are characterized by a wide electrochemical window, allowing the electrodeposition of metallic elements having a highly negative reduction potential. Electrodeposition of unconventional metals with reduction potential well below hydrogen evolution one is, in principle, feasible (e.g. Sm). Moreover, the limited presence of water during the growth of SmCo alloys may reduce oxidation and consequently improve the magnetic properties with respect to the employment of an aqueous bath. Deposits composition is strongly affected by process parameters and bath composition. Increasing choline chloride concentration and/or adding glycine to the solution allows to achieve higher Sm content in the deposit. Potentiostatic electrodeposition has been carried out in a conventional three electrodes cell, with potential interval selected from −0.7 V vs Ag wire to −0.95 V vs Ag wire, keeping the bath under stirring at 70°C. Magnetic SmCo films with composition from 0 to 50 wt% Sm have been obtained with coercivity up to 270 Oe. {\textcopyright} The Author(s) 2017. Published by ECS. All rights reserved.},
    address = {Dipartimento di Chimica, Materiali e Ingegneria Chimica Giulio Natta, Politecnico di Milano, Milan, 20131, Italy},
    annote = {Export Date: 14 September 2018},
    author = {Panzeri, G and Tresoldi, M and Rinaldi, C and Magagnin, L},
    doi = {10.1149/2.0111714jes},
    journal = {Journal of the Electrochemical Society},
    number = {13},
    pages = {D930--D933},
    title = {{Electrodeposition of magnetic SmCo films from deep eutectic solvents and choline chloride-ethylene glycol mixtures}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85034665286&doi=10.1149%2F2.0111714jes&partnerID=40&md5=60202b50b3643d7a5cb4d480a41f34ff},
    volume = {164},
    year = {2017}
    }

2016

  • [DOI] C. Rinaldi, S. Bertoli, M. Asa, L. Baldrati, C. Manzoni, M. Marangoni, G. Cerullo, M. Bianchi, R. Sordan, R. Bertacco, and M. Cantoni, “Determination of the spin diffusion length in germanium by spin optical orientation and electrical spin injection,” Journal of Physics D: Applied Physics, vol. 49, iss. 42, 2016.
    [Bibtex]
    @article{Rinaldi2016c,
    abstract = {The measurement of the spin diffusion length and/or lifetime in semiconductors is a key issue for the realisation of spintronic devices, exploiting the spin degree of freedom of carriers for storing and manipulating information. In this paper, we address such parameters in germanium (0 0 1) at room temperature (RT) by three different measurement methods. Exploiting optical spin orientation in the semiconductor and spin filtering across an insulating MgO barrier, the dependence of the resistivity on the spin of photo-excited carriers in Fe/MgO/Ge spin photodiodes (spin-PDs) was electrically detected. A spin diffusion length of 0.9 0.2 $\mu$m was obtained by fitting the photon energy dependence of the spin signal by a mathematical model. Electrical techniques, comprising non-local four-terminal and Hanle measurements performed on CoFeB/MgO/Ge lateral devices, led to spin diffusion lengths of 1.3 0.2 $\mu$m and 1.3 0.08 $\mu$m, respectively. Despite minor differences due to experimental details, the order of magnitude of the spin diffusion length is the same for the three techniques. Although standard electrical methods are the most employed in semiconductor spintronics for spin diffusion length measurements, here we demonstrate optical spin orientation as a viable alternative for the determination of the spin diffusion length in semiconductors allowing for optical spin orientation. {\textcopyright} 2016 IOP Publishing Ltd.},
    address = {Department of Physics, Politecnico di Milan, via G. Colombo 81, Milan, 20133, Italy},
    annote = {Cited By :3
    Export Date: 14 September 2018},
    author = {Rinaldi, C and Bertoli, S and Asa, M and Baldrati, L and Manzoni, C and Marangoni, M and Cerullo, G and Bianchi, M and Sordan, R and Bertacco, R and Cantoni, M},
    doi = {10.1088/0022-3727/49/42/425104},
    journal = {Journal of Physics D: Applied Physics},
    keywords = {germanium,optoelectronics,photodetector,polarimetry,spin diffusion},
    number = {42},
    title = {{Determination of the spin diffusion length in germanium by spin optical orientation and electrical spin injection}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84991276332&doi=10.1088%2F0022-3727%2F49%2F42%2F425104&partnerID=40&md5=8ffb2070b24fe228972ae9db42be10b8},
    volume = {49},
    year = {2016}
    }
  • [DOI] L. Baldrati, C. Rinaldi, A. Manuzzi, M. Asa, L. Aballe, M. Foerster, N. Biškup, M. Varela, M. Cantoni, and R. Bertacco, “Electrical switching of magnetization in the artificial multiferroic CoFeB/BaTiO3,” Advanced Electronic Materials, vol. 2, iss. 7, p. 1600085, 2016.
    [Bibtex]
    @article{Baldrati2016,
    abstract = {Electronic, magnetic, chemical, and mechanical phenomena occurring in metal/oxide heterostructures have recently received great attention in view of their exploitation in novel solid state devices. In particular, artificial multiferroics, i.e., layered or composite systems made of a ferromagnetic and ferroelectric phase, hold potential for achieving the electric control of the magnetization in spintronic devices. In this paper, a novel artificial multiferroic displaying perpendicular magnetic anisotropy is reported: the CoFeB/BaTiO3 bilayer. At room temperature, the CoFeB magnetic coercive field displays a hysteretic behavior, as a function of the voltage across the BaTiO3 layer, with a 60% variation for complete reversal of the ferroelectric BaTiO3 polarization. This is exploited to achieve the electric switching of the magnetization of individual CoFeB electrodes under a uniform magnetic bias field. Upon the local BaTiO3 polarization reversal, the CoFeB electrode jumps from an initial metastable state into the opposite stable magnetization state, with a characteristic switching time determined by magnetic viscosity. The magnetically assisted bipolar electric switching of the magnetization is demonstrated, via voltage pulses compatible with complementary metal-oxide semiconductor (CMOS) electronics, under uniform bias fields as low as 10 Oe.},
    annote = {cited By 9},
    author = {Baldrati, Lorenzo and Rinaldi, Christian and Manuzzi, Alberto and Asa, Marco and Aballe, Lucia and Foerster, Michael and Bi{\v{s}}kup, Neven and Varela, Maria and Cantoni, Matteo and Bertacco, Riccardo},
    doi = {10.1002/aelm.201600085},
    issn = {2199160X},
    journal = {Advanced Electronic Materials},
    keywords = {artificial multiferroics,magnetic viscosity,magnetoelectric coupling,perpendicular magnetic anisotropy},
    month = {jul},
    number = {7},
    pages = {1600085},
    title = {{Electrical switching of magnetization in the artificial multiferroic CoFeB/BaTiO3}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84971617594&doi=10.1002%2Faelm.201600085&partnerID=40&md5=c0303b0d15bf63ad43eccf97b3335d97 http://doi.wiley.com/10.1002/aelm.201600085},
    volume = {2},
    year = {2016}
    }
  • [DOI] M. Liebmann, C. Rinaldi, D. {Di Sante}, J. Kellner, C. Pauly, R. N. Wang, J. E. Boschker, A. Giussani, S. Bertoli, M. Cantoni, L. Baldrati, M. Asa, I. Vobornik, G. Panaccione, D. Marchenko, J. Sánchez-Barriga, O. Rader, R. Calarco, S. Picozzi, R. Bertacco, and M. Morgenstern, “Giant Rashba-type spin splitting in ferroelectric GeTe(111),” Advanced Materials, vol. 28, iss. 3, p. 560–565, 2016.
    [Bibtex]
    @article{Liebmann2016a,
    abstract = {Photoelectron spectroscopy in combination with piezoforce microscopy reveals that the helicity of Rashba bands is coupled to the nonvolatile ferroelectric polarization of GeTe(111). A novel surface Rashba band is found and fingerprints of a bulk Rashba band are identified by comparison with density functional theory calculations.},
    author = {Liebmann, Marcus and Rinaldi, Christian and {Di Sante}, Domenico and Kellner, Jens and Pauly, Christian and Wang, Rui Ning and Boschker, Jos Emiel and Giussani, Alessandro and Bertoli, Stefano and Cantoni, Matteo and Baldrati, Lorenzo and Asa, Marco and Vobornik, Ivana and Panaccione, Giancarlo and Marchenko, Dmitry and S{\'{a}}nchez-Barriga, Jaime and Rader, Oliver and Calarco, Raffaella and Picozzi, Silvia and Bertacco, Riccardo and Morgenstern, Markus},
    doi = {10.1002/adma.201503459},
    issn = {15214095},
    journal = {Advanced Materials},
    keywords = {Rashba effect,ferroelectricity,photoelectron spectroscopy,piezoforce microscopy},
    number = {3},
    pages = {560--565},
    pmid = {26599640},
    title = {{Giant Rashba-type spin splitting in ferroelectric GeTe(111)}},
    volume = {28},
    year = {2016}
    }
  • [DOI] M. Cantoni and C. Rinaldi, “Light helicity detection in MOS-based spin-photodiodes: An analytical model,” Journal of Applied Physics, vol. 120, iss. 10, 2016.
    [Bibtex]
    @article{Cantoni2016,
    abstract = {In a metal-oxide-semiconductor-based spin-photodiode, the helicity of an incoming light is efficiently converted into an electrical signal by exploiting (i) the helicity dependence of the degree of optical spin orientation for photogenerated carriers in the semiconductor and (ii) the spin-dependent tunneling transmission of the insulating barrier between the semiconductor and a ferromagnetic metal. Here, we propose a theoretical model for predicting the electrical response of the device to a circularly polarized light, by integrating the Fert-Jaffr{\`{e}}s framework [A. Fert and H. Jaffr{\`{e}}s, Phys. Rev. B 64, 184420 (2001)] with a helicity-dependent photo-generation term. A figure of merit, related to the variation of the electrical response to the switching of the light helicity from right to left, is defined, and its dependence on the constitutive parameters of the device (barrier resistivity and spin selectivity, semiconductor resistivity and spin diffusion length) is shown. Finally, a simple analytical formula for identifying the optimal resistance barrier leading to the maximum efficiency is found and experimentally validated on Fe/MgO/Ge spin-photodiodes. {\textcopyright} 2016 Author(s).},
    address = {Dipartimento di Fisica, Politecnico di Milano, via G. Colombo 81, Milano, 20131, Italy},
    annote = {Cited By :2
    Export Date: 14 September 2018},
    author = {Cantoni, M and Rinaldi, C},
    doi = {10.1063/1.4962204},
    journal = {Journal of Applied Physics},
    number = {10},
    title = {{Light helicity detection in MOS-based spin-photodiodes: An analytical model}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84986272626&doi=10.1063%2F1.4962204&partnerID=40&md5=316ee042495b912456523bc465b81139},
    volume = {120},
    year = {2016}
    }
  • [DOI] C. Rinaldi, J. C. Rojas-Sánchez, R. N. Wang, Y. Fu, S. Oyarzun, L. Vila, S. Bertoli, M. Asa, L. Baldrati, M. Cantoni, J. -M. George, R. Calarco, A. Fert, and R. Bertacco, “Evidence for spin to charge conversion in GeTe(111),” APL Materials, vol. 4, iss. 3, p. 32501, 2016.
    [Bibtex]
    @article{Rinaldi2016b,
    annote = {doi: 10.1063/1.4941276},
    author = {Rinaldi, C and Rojas-S{\'{a}}nchez, J C and Wang, R N and Fu, Y and Oyarzun, S and Vila, L and Bertoli, S and Asa, M and Baldrati, L and Cantoni, M and George, J.-M. and Calarco, R and Fert, A and Bertacco, R},
    doi = {10.1063/1.4941276},
    journal = {APL Materials},
    month = {feb},
    number = {3},
    pages = {32501},
    publisher = {American Institute of Physics},
    title = {{Evidence for spin to charge conversion in GeTe(111)}},
    url = {http://dx.doi.org/10.1063/1.4941276},
    volume = {4},
    year = {2016}
    }
  • [DOI] L. Baldrati, C. Rinaldi, A. Manuzzi, M. Asa, L. Aballe, M. Foerster, N. Biškup, M. Varela, M. Cantoni, and R. Bertacco, “artificial multiferroics: electrical switching of magnetization in the artificial multiferroic CoFeB/BaTiO3 (Adv. Electron. Mater. 7/2016),” Advanced Electronic Materials, vol. 2, iss. 7, 2016.
    [Bibtex]
    @article{Baldrati2016b,
    address = {Department of Physics, Politecnico di Milano, Via G. Colombo 81, Milano, 20133, Italy},
    annote = {Export Date: 14 September 2018},
    author = {Baldrati, L and Rinaldi, C and Manuzzi, A and Asa, M and Aballe, L and Foerster, M and Bi{\v{s}}kup, N and Varela, M and Cantoni, M and Bertacco, R},
    doi = {10.1002/aelm.201670041},
    journal = {Advanced Electronic Materials},
    keywords = {artificial multiferroics,magnetic viscosity,magnetoelectric coupling,perpendicular magnetic anisotropy},
    number = {7},
    title = {{artificial multiferroics: electrical switching of magnetization in the artificial multiferroic CoFeB/BaTiO3 (Adv. Electron. Mater. 7/2016)}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84978410146&doi=10.1002%2Faelm.201670041&partnerID=40&md5=8797de09c0277f84871be5bcc6c35612},
    volume = {2},
    year = {2016}
    }

2015

  • [DOI] R. Bertacco, G. Radaelli, D. Petti, E. Plekhanov, I. Fina, M. Asa, L. Baldrati, C. Rinaldi, M. Cantoni, P. Torelli, D. Gutiérrez, G. Panaccione, M. Varela, S. Picozzi, and J. Fontcuberta, “Switching magnetic order at an Fe/BaTiO3 interface on and off: Impact on hybrid magnetic-ferroelectric tunnel junctions,” , Center LNESS, Politecnico di Milano, Como, Italy, 2015.
    [Bibtex]
    @inproceedings{Bertacco2015,
    abstract = {Interfacial magnetoelectric coupling for electrically altering the magnetization of ferromagnetic electrodes is a viable path to achieve the electrical writing of the magnetic information in spintronic devices. Exploiting the piezoelectric behavior of a ferroelectric material (FE) in contact with a ferromagnetic (FM) thin film, the electric control of the magnetic anisotropies can be achieved.[1] However, strain-mediated methods seems hardly suitable for integration in spintronic devices, where the piezoelectric activity of a FE layer would be inhibited by the growth on a substrate. This is the reason why there is a growing interest towards 'purely electric' magnetoelectric effects. For the paradigmatic Fe/BaTiO3 (BTO) system, sizable changes of the interfacial Fe magnetic moment upon reversal of the dielectric polarization of BTO have been predicted,[2] and sizable magneto-electric effects have been observed in nanometric hybrid magnetic-ferroelectric tunneling junctions.[3] Nevertheless, so far a clear understanding of the basic physical mechanisms leading to such a macroscopic effect is still lacking. {\textcopyright} 2015 IEEE.},
    address = {Center LNESS, Politecnico di Milano, Como, Italy},
    annote = {Export Date: 15 February 2021},
    author = {Bertacco, R and Radaelli, G and Petti, D and Plekhanov, E and Fina, I and Asa, M and Baldrati, L and Rinaldi, C and Cantoni, M and Torelli, P and Guti{\'{e}}rrez, D and Panaccione, G and Varela, M and Picozzi, S and Fontcuberta, J},
    doi = {10.1109/INTMAG.2015.7156521},
    isbn = {9781479973224 (ISBN)},
    keywords = {Dielectric polarization,Ferroelectric materials,Ferroelectricity,Ferromagnetic electrodes,Ferromagnetic materials,Ferromagnetism,Macroscopic effects,Magnetic ferroelectrics,Magnetic moments,Magnetoelectric couplings,Magnetoelectric effects,Piezoelectric activity,Piezoelectric behavior,Piezoelectricity,Tunnel junctions,Tunneling junctions},
    language = {English},
    publisher = {Institute of Electrical and Electronics Engineers Inc.},
    title = {{Switching magnetic order at an Fe/BaTiO3 interface on and off: Impact on hybrid magnetic-ferroelectric tunnel junctions}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84942474971&doi=10.1109%2FINTMAG.2015.7156521&partnerID=40&md5=7b1ca4b802550c590c332980923b7e48},
    year = {2015}
    }
  • [DOI] M. Asa, L. Baldrati, C. Rinaldi, S. Bertoli, G. Radaelli, M. Cantoni, and R. Bertacco, “Electric field control of magnetic properties and electron transport in BaTiO3-based multiferroic heterostructures,” Journal of Physics Condensed Matter, vol. 27, iss. 50, 2015.
    [Bibtex]
    @article{Asa2015a,
    abstract = {In this paper, we report on a purely electric mechanism for achieving the electric control of the interfacial spin polarization and magnetoresistance in multiferroic tunneling junctions. We investigate micrometric devices based on the Co/Fe/BaTiO3/La0.7Sr0.3MnO3 heterostructure, where Co/Fe and La0.7Sr0.3MnO3 are the magnetic electrodes and BaTiO3 acts both as a ferroelectric element and tunneling barrier. We show that, at 20 K, devices with a 2 nm thick BaTiO3 barrier present both tunneling electroresistance (TER = 12 ± 0.1%) and tunneling magnetoresistance (TMR). The latter depends on the direction of the BaTiO3 polarization, displaying a sizable change of the TMR from -0.32 ± 0.05% for the polarization pointing towards Fe, to -0.12 ± 0.05% for the opposite direction. This is consistent with the on-off switching of the Fe magnetization at the Fe/BaTiO3 interface, driven by the BaTiO3 polarization, we have previously demonstrated in x-ray magnetic circular dichroism experiments. {\textcopyright} 2015 IOP Publishing Ltd.},
    address = {Dipartimento di Fisica, Politecnico di Milano, Via G. Colombo 81, Milano, 20133, Italy},
    annote = {Cited By :6
    Export Date: 14 September 2018},
    author = {Asa, M and Baldrati, L and Rinaldi, C and Bertoli, S and Radaelli, G and Cantoni, M and Bertacco, R},
    doi = {10.1088/0953-8984/27/50/504004},
    journal = {Journal of Physics Condensed Matter},
    keywords = {BaTiO3,antiferromagnetic,interface,magnetoelectric coupling,magnetotransport,multiferroic heterostructure,tunneling},
    number = {50},
    title = {{Electric field control of magnetic properties and electron transport in BaTiO3-based multiferroic heterostructures}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84948751744&doi=10.1088%2F0953-8984%2F27%2F50%2F504004&partnerID=40&md5=5e6959eeebfc38db1b1889bced18368d},
    volume = {27},
    year = {2015}
    }

2014

  • [DOI] M. Savoini, C. Piovera, C. Rinaldi, E. Albisetti, D. Petti, A. R. Khorsand, L. Duò, C. Dallera, M. Cantoni, R. Bertacco, M. Finazzi, E. Carpene, A. V. Kimel, A. Kirilyuk, and T. Rasing, “Bias-controlled ultrafast demagnetization in magnetic tunnel junctions,” Phys. Rev. B, vol. 89, iss. 14, p. 140402, 2014.
    [Bibtex]
    @article{Savoini2014,
    author = {Savoini, M and Piovera, C and Rinaldi, C and Albisetti, E and Petti, D and Khorsand, A R and Du{\`{o}}, L and Dallera, C and Cantoni, M and Bertacco, R and Finazzi, M and Carpene, E and Kimel, A V and Kirilyuk, A and Rasing, Th.},
    doi = {10.1103/PhysRevB.89.140402},
    journal = {Phys. Rev. B},
    month = {apr},
    number = {14},
    pages = {140402},
    publisher = {American Physical Society},
    title = {{Bias-controlled ultrafast demagnetization in magnetic tunnel junctions}},
    volume = {89},
    year = {2014}
    }
  • [DOI] F. Djeghloul, F. Ibrahim, M. Cantoni, M. Bowen, L. Joly, S. Boukari, P. Ohresser, F. Bertran, P. {Le Févre}, P. Thakur, F. Scheurer, T. Miyamachi, R. Mattana, P. Seneor, A. Jaafar, C. Rinaldi, S. Javaid, J. Arabski, J. -P. Kappler, W. Wulfhekel, N. B. Brookes, R. Bertacco, A. Taleb-Ibrahimi, M. Alouani, E. Beaurepaire, and W. Weber, “Direct observation of a highly spin-polarized organic spinterface at room temperature,” in SPIE 9167, Spintronics VII, 2014, p. 916713–916716.
    [Bibtex]
    @inproceedings{Djeghloul2014,
    abstract = {Toward the design of large-scale electronic circuits that are entirely spintronics-driven, organic semiconductors have been identified as a promising medium to transport information using the electron spin. This requires a ferromagnetic metal-organic interface that is highly spin-polarized at and beyond room temperature, but this key building block is still lacking. We show how the interface between Co and phthalocyanine molecules constitutes a promising candidate. In fact, spin-polarized direct and inverse photoemission experiments reveal a high degree of spin polarization at room temperature at this interface.},
    annote = {10.1117/12.2060367},
    author = {Djeghloul, F and Ibrahim, F and Cantoni, M and Bowen, M and Joly, L and Boukari, S and Ohresser, P and Bertran, F and {Le F{\'{e}}vre}, P and Thakur, P and Scheurer, F and Miyamachi, T and Mattana, R and Seneor, P and Jaafar, A and Rinaldi, C and Javaid, S and Arabski, J and Kappler, J.-P. and Wulfhekel, W and Brookes, N B and Bertacco, R and Taleb-Ibrahimi, A and Alouani, M and Beaurepaire, E and Weber, W},
    booktitle = {SPIE 9167, Spintronics VII},
    doi = {10.1117/12.2060367},
    pages = {916713--916716},
    title = {{Direct observation of a highly spin-polarized organic spinterface at room temperature}},
    volume = {9167},
    year = {2014}
    }
  • [DOI] G. Radaelli, D. Petti, E. Plekhanov, I. Fina, P. Torelli, B. R. Salles, M. Cantoni, C. Rinaldi, D. Gutiérrez, G. Panaccione, M. Varela, S. Picozzi, J. Fontcuberta, and R. Bertacco, “Electric control of magnetism at the Fe/BaTiO3interface,” Nature Communications, vol. 5, 2014.
    [Bibtex]
    @article{Radaelli2014,
    abstract = {Interfacial magnetoelectric coupling is a viable path to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO3system, only tiny changes of the interfacial Fe magnetic moment upon reversal of the BaTiO3dielectric polarization have been predicted so far. Here, by using X-ray magnetic circular dichroism in combination with high-resolution electron microscopy and first principles calculations, we report on an undisclosed physical mechanism for interfacial magnetoelectric coupling in the Fe/BaTiO3system. At this interface, an ultrathin oxidized iron layer exists, whose magnetization can be electrically and reversibly switched on and off at room temperature by reversing the BaTiO3polarization. The suppression/recovery of interfacial ferromagnetism results from the asymmetric effect that ionic displacements in BaTiO3produces on the exchange coupling constants in the interfacial-oxidized Fe layer. The observed giant magnetoelectric response holds potential for optimizing interfacial magnetoelectric coupling in view of efficient, low-power spintronic devices. {\textcopyright} 2014 Macmillan Publishers Limited.},
    address = {LNESS, Dipartimento di Fisica-Politecnico di Milano, Via Anzani 42, Como, 22100, Italy},
    annote = {Cited By :137
    Export Date: 15 February 2021
    Correspondence Address: Bertacco, R.; LNESS, Dipartimento di Fisica-Politecnico di Milano, Via Anzani 42, Italy},
    author = {Radaelli, G and Petti, D and Plekhanov, E and Fina, I and Torelli, P and Salles, B R and Cantoni, M and Rinaldi, C and Guti{\'{e}}rrez, D and Panaccione, G and Varela, M and Picozzi, S and Fontcuberta, J and Bertacco, R},
    doi = {10.1038/ncomms4404},
    issn = {20411723 (ISSN)},
    journal = {Nature Communications},
    keywords = {Article,X ray absorption spectroscopy,X ray magnetic circular dichroism,X-ray,barium derivative,circular dichroism,coupling,density functional theory,electric control,electricity,electromagnetic field,electron microscopy,high resolution electron microscopy,iron derivative,magnetism,magnetization,polarization,titanium dioxide,transmission electron microscopy},
    language = {English},
    publisher = {Nature Publishing Group},
    title = {{Electric control of magnetism at the Fe/BaTiO3interface}},
    url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84903893862&doi=10.1038%2Fncomms4404&partnerID=40&md5=32ac26c11c551e1bfdfe0ef6749b2466},
    volume = {5},
    year = {2014}
    }
  • [DOI] C. Rinaldi, M. Cantoni, M. Marangoni, C. Manzoni, G. Cerullo, and R. Bertacco, “Wide-range optical spin orientation in Ge from near-infrared to visible light,” Phys. Rev. B, vol. 90, iss. 16, p. 161304, 2014.
    [Bibtex]
    @article{Rinaldi2014a,
    author = {Rinaldi, C and Cantoni, M and Marangoni, M and Manzoni, C and Cerullo, G and Bertacco, R},
    doi = {10.1103/PhysRevB.90.161304},
    journal = {Phys. Rev. B},
    number = {16},
    pages = {161304},
    publisher = {American Physical Society},
    title = {{Wide-range optical spin orientation in Ge from near-infrared to visible light}},
    volume = {90},
    year = {2014}
    }
  • [DOI] G. Radaelli, D. Petti, M. Cantoni, C. Rinaldi, and R. Bertacco, “Absence of strain-mediated magnetoelectric coupling at fully epitaxial Fe/BaTiO3 interface (invited),” Journal of Applied Physics, vol. 115, iss. 17, 2014.
    [Bibtex]
    @article{Radaelli2014a,
    author = {Radaelli, G and Petti, D and Cantoni, M and Rinaldi, C and Bertacco, R},
    doi = {10.1063/1.4870915},
    journal = {Journal of Applied Physics},
    number = {17},
    title = {{Absence of strain-mediated magnetoelectric coupling at fully epitaxial Fe/BaTiO3 interface (invited)}},
    volume = {115},
    year = {2014}
    }
  • [DOI] C. Rinaldi, S. Bertoli, M. Cantoni, C. Manzoni, M. Marangoni, G. Cerullo, M. Bianchi, R. Sordan, and R. Bertacco, “Determination of spin diffusion length in Germanium by optical and electrical spin injection,” in SPIE 9167, Spintronics VII, 2014, p. 916709–916712.
    [Bibtex]
    @inproceedings{Rinaldi2014,
    abstract = {We report on the measurements of spin diffusion length and lifetime in Germanium with both magneto-electro-optical and magneto-electrical techniques. Magneto-electro-optical measurements were made by optically inject in Fe/MgO/Ge spin-photodiodes a spin polarized population around the {\^{I}}“ point of the Brillouin zone of Ge at different photon energies. The spin diffusion length is obtained by fitting by a mathematical model the photon energy dependence of the spin signal, due to switching of the light polarization from left to right, leading to a spin diffusion length of 0.9{\^{A}}±0.2 {\^{I}}¼m at room temperature. Non-local four-terminals and Hanle measurements performed on Fe/MgO/Ge lateral devices, at room temperature, instead lead to 1.2{\^{A}}±0.2 {\^{I}}¼m. The compatibility of these values among the different measurement methods validates the use all of all of them to determine the spin diffusion length in semiconductors. While electrical methods are well known in semiconductor spintronics, in this work we demonstrate that the optical pumping versus photon energy is an alternative and reliable method for the determination of the spin diffusion length whereas the band structure of the semiconductor allows for a non-negligible optical spin orientation.},
    annote = {10.1117/12.2061591},
    author = {Rinaldi, Christian and Bertoli, Stefano and Cantoni, Matteo and Manzoni, Cristian and Marangoni, Marco and Cerullo, Giulio and Bianchi, Massimiliano and Sordan, Roman and Bertacco, Riccardo},
    booktitle = {SPIE 9167, Spintronics VII},
    doi = {10.1117/12.2061591},
    pages = {916709--916712},
    title = {{Determination of spin diffusion length in Germanium by optical and electrical spin injection}},
    volume = {9167},
    year = {2014}
    }

2013

  • [DOI] P. Wadley, A. Crespi, J. Gazquez, M. A. Roldan, P. Garcia, V. Novak, R. Campion, T. Jungwirth, C. Rinaldi, X. Marti, V. Holy, C. Frontera, and J. Rius, “Obtaining the structure factors for an epitaxial film using Cu X-ray radiation,” Journal of Applied Crystallography, vol. 46, iss. 6, 2013.
    [Bibtex]
    @article{Wadley2013a,
    author = {Wadley, P and Crespi, A and Gazquez, J and Roldan, M A and Garcia, P and Novak, V and Campion, R and Jungwirth, T and Rinaldi, C and Marti, X and Holy, V and Frontera, C and Rius, J},
    doi = {10.1107/S002188981302414X},
    journal = {Journal of Applied Crystallography},
    number = {6},
    title = {{Obtaining the structure factors for an epitaxial film using Cu X-ray radiation}},
    volume = {46},
    year = {2013}
    }
  • C. Rinaldi, “Growth and characterization of epitaxial ultrathin-Fe on BaTiO3 films,” in Nuovo Cimento C, 2013, p. 71–79.
    [Bibtex]
    @inproceedings{Rinaldi2013,
    author = {Rinaldi, C},
    booktitle = {Nuovo Cimento C},
    number = {4},
    pages = {71--79},
    title = {{Growth and characterization of epitaxial ultrathin-Fe on BaTiO3 films}},
    volume = {36C},
    year = {2013}
    }
  • [DOI] F. Djeghloul, F. Ibrahim, M. Cantoni, M. Bowen, L. Joly, S. Boukari, P. Ohresser, F. Bertran, P. {Le Fèvre}, P. Thakur, F. Scheurer, T. Miyamachi, R. Mattana, P. Seneor, A. Jaafar, C. Rinaldi, S. Javaid, J. Arabski, J. P. Kappler, W. Wulfhekel, N. B. Brookes, R. Bertacco, A. Taleb-Ibrahimi, M. Alouani, E. Beaurepaire, and W. Weber, “Direct observation of a highly spin-polarized organic spinterface at room temperature,” Sci. Rep., vol. 3, 2013.
    [Bibtex]
    @article{Djeghloul2013,
    annote = {10.1038/srep01272},
    author = {Djeghloul, F and Ibrahim, F and Cantoni, M and Bowen, M and Joly, L and Boukari, S and Ohresser, P and Bertran, F and {Le F{\`{e}}vre}, P and Thakur, P and Scheurer, F and Miyamachi, T and Mattana, R and Seneor, P and Jaafar, A and Rinaldi, C and Javaid, S and Arabski, J and Kappler, J P and Wulfhekel, W and Brookes, N B and Bertacco, R and Taleb-Ibrahimi, A and Alouani, M and Beaurepaire, E and Weber, W},
    doi = {10.1038/srep01272},
    journal = {Sci. Rep.},
    publisher = {Macmillan Publishers Limited. All rights reserved},
    title = {{Direct observation of a highly spin-polarized organic spinterface at room temperature}},
    volume = {3},
    year = {2013}
    }
  • [DOI] P. Wadley, V. Novák, R. P. Campion, C. Rinaldi, X. Martí, H. Reichlová, J. Železný, J. Gazquez, M. A. Roldan, M. Varela, D. Khalyavin, S. Langridge, D. Kriegner, F. Máca, J. Mašek, R. Bertacco, V. Holý, A. W. Rushforth, K. W. Edmonds, B. L. Gallagher, C. T. Foxon, J. Wunderlich, and T. Jungwirth, “Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs,” Nat Commun, vol. 4, p. 1–6, 2013.
    [Bibtex]
    @article{Wadley2013,
    annote = {Supplementary information available for this article at http://www.nature.com/ncomms/2013/130820/ncomms3322/suppinfo/ncomms3322_S1.html},
    author = {Wadley, P and Nov{\'{a}}k, V and Campion, R P and Rinaldi, C and Mart{\'{i}}, X and Reichlov{\'{a}}, H and {\v{Z}}elezn{\'{y}}, J and Gazquez, J and Roldan, M A and Varela, M and Khalyavin, D and Langridge, S and Kriegner, D and M{\'{a}}ca, F and Ma{\v{s}}ek, J and Bertacco, R and Hol{\'{y}}, V and Rushforth, A W and Edmonds, K W and Gallagher, B L and Foxon, C T and Wunderlich, J and Jungwirth, T},
    doi = {10.1038/ncomms3322},
    journal = {Nat Commun},
    pages = {1--6},
    publisher = {Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved.},
    title = {{Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs}},
    volume = {4},
    year = {2013}
    }

2012

  • [DOI] P. Torelli, M. Sperl, R. Ciancio, J. Fujii, C. Rinaldi, M. Cantoni, R. Bertacco, M. Utz, D. Bougeard, M. Soda, E. Carlino, G. Rossi, C. H. Back, and G. Panaccione, “Growth of ultrathin epitaxial Fe/MgO spin injector on (0, 0, 1) (Ga, Mn)As,” Nanotechnology, vol. 23, iss. 46, p. 465202, 2012.
    [Bibtex]
    @article{Torelli2012a,
    abstract = {We have grown an ultrathin epitaxial Fe/MgO bilayer on (Ga, Mn)As by e-beam evaporation in UHV. The system structure has been investigated by high resolution transmission electron microscopy (TEM) experiments which show that the Fe and MgO films, covering completely the (Ga, Mn)As, grow with the epitaxial relationship Fe[100](001){\^{A}} {\^{a}}ˆ¥{\^{A}} MgO[110](001){\^{A}} {\^{a}}ˆ¥{\^{A}} (Ga,Mn)As[110](001). The magnetic reversal process, studied by the magneto-optical Kerr effect (MOKE) at room temperature, demonstrates that the iron is ferromagnetic and possesses a cubic anisotropy, confirming the epitaxy relationship found with TEM. Resistivity measurements across the barrier display a non-Ohmic behavior characterized by cubic conductance as a function of the applied voltage suggesting tunneling-dominated transport across the barrier.},
    author = {Torelli, P and Sperl, M and Ciancio, R and Fujii, J and Rinaldi, C and Cantoni, M and Bertacco, R and Utz, M and Bougeard, D and Soda, M and Carlino, E and Rossi, G and Back, C H and Panaccione, G},
    doi = {10.1088/0957-4484/23/46/465202},
    issn = {0957-4484},
    journal = {Nanotechnology},
    number = {46},
    pages = {465202},
    title = {{Growth of ultrathin epitaxial Fe/MgO spin injector on (0, 0, 1) (Ga, Mn)As}},
    volume = {23},
    year = {2012}
    }
  • [DOI] C. Rinaldi, M. Cantoni, D. Petti, and R. Bertacco, “Epitaxial Fe/MgO/Ge spin-photodiodes for integrated detection of light helicity at room temperature,” J. Appl. Phys., vol. 111, iss. 7, p. 07C312––3, 2012.
    [Bibtex]
    @article{Rinaldi2012a,
    author = {Rinaldi, C and Cantoni, M and Petti, D and Bertacco, R},
    doi = {10.1063/1.3676243},
    journal = {J. Appl. Phys.},
    keywords = {epitaxial layers,germanium,iron,light polarisation,magnesium compounds,magnetic circular dichroism,photoconductivity,photodiodes,photoexcitation},
    month = {apr},
    number = {7},
    pages = {07C312----3},
    publisher = {AIP},
    title = {{Epitaxial Fe/MgO/Ge spin-photodiodes for integrated detection of light helicity at room temperature}},
    volume = {111},
    year = {2012}
    }
  • [DOI] C. Rinaldi, M. Espahbodi, M. Cantoni, and R. Bertacco, “Spin-photodiodes for SiGe spin-optoelectronics,” in SPIE 8461, Spintronics V, 2012, p. 84611F––84611F.
    [Bibtex]
    @inproceedings{Rinaldi2012b,
    abstract = {We report on spin-photodiodes based on fully epitaxial Fe/MgO/Ge(001) heterostructures for room temperature integrated detection of light helicity at 1300 nm and 1550 nm wavelengths. The degree of circular polarization of light determines the spin direction of photo-carriers in Ge that are filtered by the Fe/MgO analyzer. Spin-detection experiments are performed by measuring the photocurrent while illuminating the spin-photodiodes with left or right circularly polarized light, under the application of a magnetic field parallel to the light direction which drives the Fe magnetization out of plane. We found that the spin-photodiodes spin filtering asymmetry is reduced by {\^{a}}ˆ¼40% in forward bias and by less than 15% in reverse bias, when increasing the photon wavelength from 1300 nm to 1550 nm. This result, apparently counterintuitive because of the larger spin polarization of the photo-carriers generated at 1550 nm with respect to that at 1300 nm, is explained in terms of the different spatial profile of carrier generation inside Ge. The larger penetration depth of light at 1550 nm leads to a smaller polarization of photocarriers when they reach the MgO tunneling barrier, due to the more efficient spin relaxation during transport.},
    annote = {10.1117/12.956474},
    author = {Rinaldi, Christian and Espahbodi, Mohammad and Cantoni, Matteo and Bertacco, Riccardo},
    booktitle = {SPIE 8461, Spintronics V},
    doi = {doi: 10.1117/12.956474},
    editor = {Razeghi, Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh},
    pages = {84611F----84611F},
    title = {{Spin-photodiodes for SiGe spin-optoelectronics}},
    volume = {8461},
    year = {2012}
    }
  • [DOI] C. Rinaldi, M. Cantoni, D. Petti, A. Sottocorno, M. Leone, N. M. Caffrey, S. Sanvito, and R. Bertacco, “Ge-Based Spin-Photodiodes for Room-Temperature Integrated Detection of Photon Helicity,” Adv. Mater., vol. 24, iss. 22, p. 3037–3041, 2012.
    [Bibtex]
    @article{Rinaldi2012,
    abstract = {Spin-photodiodes based on Fe/MgO/Ge(001) heterostructures are reported. These devices perform the room-temperature integrated electrical detection of the spin polarization of a photocurrent generated by circularly polarized photons with a wavelength of 1300 nm, for light pulses with intensity I0 down to 200 $\mu$W. A forward and reverse-biased average photocurrent variation of 5.9% is measured for the complete reversal of the incident light helicity.},
    author = {Rinaldi, Christian and Cantoni, Matteo and Petti, Daniela and Sottocorno, Andrea and Leone, Marco and Caffrey, Nuala M and Sanvito, Stefano and Bertacco, Riccardo},
    doi = {10.1002/adma.201104256},
    issn = {1521-4095},
    journal = {Adv. Mater.},
    keywords = {magnetism,photonics,spin-optoelectronics,spintronics},
    number = {22},
    pages = {3037--3041},
    publisher = {WILEY-VCH Verlag},
    title = {{Ge-Based Spin-Photodiodes for Room-Temperature Integrated Detection of Photon Helicity}},
    volume = {24},
    year = {2012}
    }

2011

  • [DOI] M. Cantoni, D. Petti, C. Rinaldi, and R. Bertacco, “Epitaxial growth of Fe/MgO/Ge(001) heterostructures,” Microelectronic Engineering, vol. 88, iss. 4, p. 530–533, 2011.
    [Bibtex]
    @article{Cantoni2011,
    abstract = {We report on the growth of epitaxial Fe/MgO heterostructures on Ge(0 0 1) by Molecular Beam Epitaxy. The better crystal quality and interfacial chemical sharpness at the oxide-semiconductor interface have been obtained by growing MgO at room temperature, followed by a post-annealing at 773 K, on top of a p(2 × 1)-Ge(0 0 1) clean surface. The growth of Fe at room temperature followed by annealing at 473 K gives the best epitaxial structure with optimized crystallinity of each layer compatible with limited chemical interdiffusion. Tunneling devices based on the epitaxial Fe/MgO/Ge heterostructure have been micro-fabricated and tested in order to probe the electrical properties of the MgO barrier. The current-voltage characteristics clearly show that tunneling is the dominant phenomenon, thus indicating that this system is very promising for practical applications in electronics and spintronics.},
    author = {Cantoni, M and Petti, D and Rinaldi, C and Bertacco, R},
    doi = {10.1016/j.mee.2010.09.016},
    issn = {0167-9317},
    journal = {Microelectronic Engineering},
    keywords = {Epitaxy,Germanium,MOS heterostructure,Magnesium oxide},
    month = {apr},
    number = {4},
    pages = {530--533},
    title = {{Epitaxial growth of Fe/MgO/Ge(001) heterostructures}},
    volume = {88},
    year = {2011}
    }
  • [DOI] M. Cantoni, D. Petti, C. Rinaldi, and R. Bertacco, “Bandstructure line-up of epitaxial Fe/MgO/Ge heterostructures: A combined X-ray photoelectron spectroscopy and transport study,” Appl. Phys. Lett., vol. 98, iss. 3, p. 32103–32104, 2011.
    [Bibtex]
    @article{Cantoni2011a,
    author = {Cantoni, M and Petti, D and Rinaldi, C and Bertacco, R},
    doi = {10.1063/1.3543851},
    journal = {Appl. Phys. Lett.},
    keywords = {Fermi level,MIS structures,Schottky barriers,X-ray photoelectron spectra,band structure,doping,electrical conductivity,elemental semiconductors,germanium,iron,magnesium compounds},
    number = {3},
    pages = {32103--32104},
    publisher = {AIP},
    title = {{Bandstructure line-up of epitaxial Fe/MgO/Ge heterostructures: A combined X-ray photoelectron spectroscopy and transport study}},
    volume = {98},
    year = {2011}
    }
  • [DOI] J. Gazquez, M. Varela, D. Petti, M. Cantoni, C. Rinaldi, S. Brivio, and R. Bertacco, “Aberration corrected scanning transmission electron microscopy and electron energy loss spectroscopy studies of epitaxial Fe/MgO/(001)Ge heterostructures,” Journal of Materials Science, vol. 46, p. 1–5, 2011.
    [Bibtex]
    @article{Gazquez2011,
    abstract = {Aberration correction in the scanning transmission electron microscope combined with electron energy loss spectroscopy allows simultaneous mapping of the structure, the chemistry and even the electronic properties of materials in one single experiment with spatial resolutions of the order of one {\~{A}}{\ldots}ngstr{\~{A}}{\P}m. Here the authors will apply these techniques to the characterization of epitaxial Fe/MgO/(001)Ge and interfaces with possible applications for tunneling junctions, and the authors will show that epitaxial MgO films can be grown on a (001)Ge substrates by molecular beam epitaxy and how it is possible to map the chemistry of interfaces with atomic resolution.},
    author = {Gazquez, Jaume and Varela, Maria and Petti, Daniela and Cantoni, Matteo and Rinaldi, Christian and Brivio, Stefano and Bertacco, Riccardo},
    doi = {10.1007/s10853-011-5248-7},
    issn = {0022-2461},
    journal = {Journal of Materials Science},
    pages = {1--5},
    publisher = {Springer Netherlands},
    title = {{Aberration corrected scanning transmission electron microscopy and electron energy loss spectroscopy studies of epitaxial Fe/MgO/(001)Ge heterostructures}},
    volume = {46},
    year = {2011}
    }
  • [DOI] S. Brivio, C. Rinaldi, D. Petti, R. Bertacco, and F. Sanchez, “Epitaxial growth of Fe/BaTiO3 heterostructures,” Thin Solid Films, vol. 519, p. 5804–5807, 2011.
    [Bibtex]
    @article{Brivio,
    abstract = {The realization of epitaxial heterostructures involving ferroelectric (FE) and ferromagnetic (FM) materials is one of the possible routes towards the realization of devices exploiting sizable magnetoelectric effects. In this paper we demonstrate the epitaxial growth of Fe on BaTiO3(001) as this system represents a prototypical example of interface between well known FE and FM materials with bcc and perovskite structure respectively, both with Curie temperature well above 300 K. Fe grows on BaTiO3 with 45° rotation of its cubic lattice with respect to that of the substrate in order to reduce the lattice mismatch. Negligible interdiffusion of Ba and Ti cations or Fe atoms is found by X-ray photoemission spectroscopy, while a sizable Fe oxidation occurs within an interfacial layer with thicknesses thinner than 3 nm.},
    author = {Brivio, S and Rinaldi, C and Petti, D and Bertacco, R and Sanchez, F},
    doi = {10.1016/j.tsf.2010.12.193},
    issn = {0040-6090},
    journal = {Thin Solid Films},
    pages = {5804--5807},
    title = {{Epitaxial growth of Fe/BaTiO3 heterostructures}},
    volume = {519},
    year = {2011}
    }
  • [DOI] D. Petti, M. Cantoni, C. Rinaldi, S. Brivio, R. Bertacco, J. Gazquez, and M. Varela, “Sharp Fe/MgO/Ge(001) epitaxial heterostructures for tunneling junctions,” J. Appl. Phys., vol. 109, iss. 8, p. 84907–84909, 2011.
    [Bibtex]
    @article{Petti2011,
    author = {Petti, D and Cantoni, M and Rinaldi, C and Brivio, S and Bertacco, R and Gazquez, J and Varela, M},
    doi = {10.1063/1.3554834},
    journal = {J. Appl. Phys.},
    keywords = {annealing,elemental semiconductors,epitaxial layers,germanium,iron,magnesium compounds,molecular beam epitaxial growth,oxidation,transmission electron microscopy},
    month = {apr},
    number = {8},
    pages = {84907--84909},
    publisher = {AIP},
    title = {{Sharp Fe/MgO/Ge(001) epitaxial heterostructures for tunneling junctions}},
    volume = {109},
    year = {2011}
    }
  • [DOI] D. Petti, M. Cantoni, C. Rinaldi, and R. Bertacco, “Chemical and electronic properties of Fe/MgO/Ge heterostructures for spin electronics,” Journal of Physics: Conference Series, vol. 292, iss. 1, p. 12010, 2011.
    [Bibtex]
    @article{Petti2011a,
    abstract = {We report on the chemical and electronic properties of epitaxial Fe/MgO/Ge(001) heterostructures probed by X-ray Photoemission Spectroscopy. At variance with the Fe/MgO/Fe system, annealing at 570 K produces a sizable interdiffusion at the upper Fe/MgO interface, while at 470 K this process is inhibited. The XPS analysis of band alignment in heterostructures annealed at 470 K grown onto an intrinsic Ge substrate indicates that the Fermi level is placed at the center of the MgO gap and that the Schottky barrier height is 0.35{\^{A}}±0.1 eV, thus indicating a partial depinning of the Fermi level.},
    author = {Petti, D and Cantoni, M and Rinaldi, C and Bertacco, R},
    doi = {10.1088/1742-6596/292/1/012010},
    issn = {1742-6596},
    journal = {Journal of Physics: Conference Series},
    number = {1},
    pages = {12010},
    title = {{Chemical and electronic properties of Fe/MgO/Ge heterostructures for spin electronics}},
    volume = {292},
    year = {2011}
    }